Microchip MCU PIC16HV616 Hex Reading can dump the firmware out from the memory which include flash and eeprom ones, the tamper resistance system of MCU can be cracked through cut off the security fuse bit by focus ion beam.
The Calibration Row is a seperate memory section for factory programmed data. It contains calibration data for functions such as oscillators, device ID, and a factory programmed serial number that is unique for each device. The device ID for the available XMEGA A1 devices is shown in Table 7-1 on page 13. Some of the calibration values will be automatically loaded to the corresponding module or peripheral unit during reset. The Calibration Row can not be written or erased when copy microchip mcu pic16c77 program.
It can be read from application software and external programming. The User Signature Row is a seperate memory section that is fully accessible (read and write) from application software and external programming. The User Signature Row is one flash page in size, and is meant for static user parameter storage, such as calibration data, custom serial numbers, random number seeds etc. This section is not erased by Chip Erase, and requires a dedicated erase command. This ensures parameter storage during multiple program/erase session and On-Chip Debug sessions before the microcontroller pic16c710 code extraction.
The Flash Program Memory and EEPROM data memory is organized in pages. The pages are word accessible for the Flash and byte accessible for the EEPROM. Table 7-2 on page 14 shows the Flash Program Memory organization. Flash write and erase operations are performed on one page at the time, while reading the Flash is done one byte at the time. For Flash access the Z-pointer (Z[m:n]) is used for addressing. The most significant bits in the address (FPAGE) gives the page number and the least significant address bits (FWORD) gives the word in the page if the eeprom of mcu pic16c717 being read.
Table 7-3 on page 14 shows EEPROM memory organization for the XMEGA A1 devices. EEPROM write and erase operations can be performed one page or one byte at the time, while reading the EEPROM is done one byte at the time. For EEPROM access the NVM Address Register (ADDR[m:n]) is used for addressing. The most significant bits in the address (E2PAGE) gives the page number and the least significant address bits (E2BYTE) gives the byte in the page.
